BAlGaN alloys nearly lattice-matched to AlN for efficient UV LEDs
نویسندگان
چکیده
منابع مشابه
Digital Alloys of AlN/AlGaN for Deep UV Light Emitting Diodes
We report a systematic study of the optical and electrical properties of deep ultraviolet light emitting diodes based on digital alloy structures of AlN/Al0:08Ga0:92N grown by gas source molecular beam epitaxy with ammonia. Digital alloys are formed by short period superlattices consisting of Al0:08Ga0:92N wells, 0.50 or 0.75 nm thick, and AlN barriers, 0.75 to 1.5 nm thick. For digital alloys ...
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S. Nikishin, B. Borisov, M. Pandikunta, R. Dahal, J. Y. Lin, H. X. Jiang, H. Harris, and M. Holtz Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA Department of Physics and Nano Tech Center, Texas Tech University, Lubb...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2019
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5129387